AO4702

AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations. Standard Product AO4702 is Pb-free (meets ROHS & Sony 259 specifications). AO4702L is a Green Product ordering option. AO4702and AO4702L are electrically identical. Features VDS (V) = 30V ID = 11A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D S S S G D D D D K G S A SOIC-8 www.DataSheet4U.com Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter MOSFET Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current B Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A B ±20 11 9.3 50 30 4.4 3.2 3 2 -55 to 150 30 3 2 -55 to 150 Schottky reverse voltage Continuous Forward Current TA=70°C TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range V A IF IFM PD TJ, TSTG Pulsed Diode Forward Current W °C Alpha & Omega Semiconductor, Ltd. AO4702 Thermal Characteristics: MOSFET Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics: Schottky Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-...