MT5C2561

SRAM Austin Semiconductor, Inc. 256K x 1 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-88725 SMD 5962-88544 MIL-STD-883 MT5C2561 PIN ASSIGNMENT (Top View) 24-Pin DIP (C) (300 MIL) A6 A7 A8 A9 A10 A11 A14 A15 A0 Q WE\ Vss 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A5 A4 A3 A2 A1 A17 A16 A13 A12 D CE\ FEATURES High Speed: 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE\ All inputs and outputs are TTL compatible 28-Pin LCC (EC) www.DataSheet4U.com Timing 35ns access 45ns access 55ns access 70ns access Package(s) Ceramic DIP (300 mil) Ceramic LCC -35 -45 -55* -70* A8 A7 A6 Vcc A17 3 2 1 28 27 NC 4 A9 5 A10 6 A11 7 A14 8 A15 9 A0 10 Q 11 NC 12 13 14 15 16 17 A12 D CE\ Vss WE\ 26 25 24 23 22 21 20 19 18 NC A4 A3 A2 A1 A17 A16 A13 NC OPTIONS MARKING C EC No. 106 No. 204 Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT 2V data retention/low power L GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system d...