IRLU7807ZPBF

PD - 95777A IRLR7807ZPbF IRLU7807ZPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l l l HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 30V 13.8mXà 7.0nC Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRLR7807Z I-Pak IRLU7807Z www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 Units V ™ f 30f 43 170 40 20 ± 20 A W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range g g 0.27 -55 to + 175 W/°C °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ. Max. 3.75 50 110 Units °C/W gà ––– ––– ––– Notes  through … are on page 11 www.irf.com 1 12/8/04 IRLR/U7807ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Dr...