IRLU3915PBF

PD - 95090A AUTOMOTIVE MOSFET IRLR3915PbF IRLU3915PbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 14mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 30A www.DataSheet4U.com I-Pak D-Pak IRLR3915PbF IRLU3915PbF Max. 61 43 30 240 120 0.77 ± 16 200 600 See Fig.12a, 12b, 15, 16 -55 to + 175 °C 300 (1.6mm from case ) Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Single Pulse Avalanche Energy Tested Value‡ Avalanche Current Repetitive Avalanche Energy† Operating Junction and Storage Temperature Range...