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IRLI530N

International Rectifier
Part Number IRLI530N
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jun 5, 2007
Detailed Description PD - 9.1350B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation...
Datasheet PDF File IRLI530N PDF File

IRLI530N
IRLI530N

Overview
PD - 9.
1350B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.
5KVRMS … l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated Description l l IRLI530N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.
10Ω G ID = 12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak ...


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