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IRGBC30M-S

International Rectifier
Part Number IRGBC30M-S
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 5, 2007
Detailed Description Previous Datasheet Index Next Data Sheet PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short c...
Datasheet PDF File IRGBC30M-S PDF File

IRGBC30M-S
IRGBC30M-S

Overview
Previous Datasheet Index Next Data Sheet PD - 9.
1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig.
1 for Current vs.
Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.
9V @VGE = 15V, I C = 16A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a ho...


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