DatasheetsPDF.com

IRG4BC30FD1 Dataheets PDF



Part Number IRG4BC30FD1
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4BC30FD1 DatasheetIRG4BC30FD1 Datasheet (PDF)

PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Features • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. • Industry standard TO-220AB package. G E VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = .

  IRG4BC30FD1   IRG4BC30FD1


IRG4BC20UD-SPBF IRG4BC30FD1 IRG4BC40SPBF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)