HEXFET Power MOSFET
PD - 95524
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Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Te...
Description
PD - 95524
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Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free
HEXFET® Power MOSFET
D
IRFZ24VSPbF IRFZ24VLPbF
VDSS = 60V RDS(on) = 60mΩ
G S
ID = 17A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24VL) is available for low-profile applications.
Description
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D2 Pak IRFZ24VS
TO-262 IRFZ24VL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Ava...
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