HEXFET Power MOSFET
PD - 95369A
IRFR2405PbF IRFU2405PbF
Surface Mount (IRFR2405) l Straight Lead (IRFU2405) l Advanced Process Technology l...
Description
PD - 95369A
IRFR2405PbF IRFU2405PbF
Surface Mount (IRFR2405) l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
HEXFET® Power MOSFET
D
VDSS = 55V
G S
RDS(on) = 0.016Ω ID = 56A
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
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D-Pak IRFR2405
I-Pak IRFU2405
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
56 40 22...
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