IRFPG50PBF

PD - 94806 IRFPG50PbF HEXFET® Power MOSFET Lead-Free www.DataSheet4U.com www.irf.com 1 10/31/03 IRFPG50PbF 2 www.irf.com IRFPG50PbF www.irf.com 3 IRFPG50PbF 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 10us 10 100us 1ms 1 10ms 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFPG50PbF www.irf.com 5 IRFPG50PbF 6 www.irf.com IRFPG50PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + + - RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFPG50PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) -D- 15.90 (.626) 15.30 (.602) -B- 3.65 (.143) 3.55 (.140) -A0.25 (.010) M D B M 5.50 (.217) 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 20.30 (...