HEXFET Power MOSFET
PD - 95611
IRFIBC30GPbF
•
Lead-Free
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Description
PD - 95611
IRFIBC30GPbF
Lead-Free
www.DataSheet4U.com
www.irf.com
1
7/29/04
IRFIBC30GPbF
2
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IRFIBC30GPbF
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3
IRFIBC30GPbF
4
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IRFIBC30GPbF
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IRFIBC30GPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
+ +
-
dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig. 14 For N and P Channel HEXFETS
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IRFIBC30GPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2 AS S E M B L E D O N W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L OT CODE P AR T N U M B E R
IR F I8 4 0 G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E C O D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K
Data and specifications sub...
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