IRF8915PBF

PD -95727 IRF8915PbF HEXFET® Power MOSFET Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free VDSS 20V 18.3m:@VGS = 10V RDS(on) max ID 8.9A S1 G1 1 8 7 D1 D1 D2 D2 2 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current www.DataSheet4U.com S2 G2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 8.9 7.1 71 2.0 1.3 0.016 -55 to + 150 Units V c A W W/°C °C Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 62.5 Units °C/W f Notes  through … are on page 10 www.irf.com 1 8/11/04 IRF8915PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forw...