HEXFET Power MOSFET
PD - 95287A
IRF7492PbF
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free
VDSS
200V
RDS(...
Description
PD - 95287A
IRF7492PbF
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free
VDSS
200V
RDS(on) max 79mW@VGS = 10V
ID
3.7A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
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Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
200 ± 20 3.7 3.0 30 2.5 0.02 9.5 -55 to + 150 300 (1.6mm from case )
Units
V V A W W/°C V/ns °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through are on page 8
www.irf.com
1
02/23/07
IRF7492PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage BV(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– –...
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