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IRF7341PBF

Part Number	IRF7341PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 5, 2007
Detailed Description	PD -95199 IRF7341PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Availa...
Datasheet	IRF7341PBF PDF File

Overview

PD -95199 IRF7341PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = 55V RDS(on) = 0.
050Ω 6 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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IRF7341PBF HEXFET Power MOSFET - International Rectifier

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