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AS5LC1008 Dataheets PDF



Part Number AS5LC1008
Manufacturers Austin Semiconductor
Logo Austin Semiconductor
Description 128K x 8 SRAM High-Speed CMOS SRAM
Datasheet AS5LC1008 DatasheetAS5LC1008 Datasheet (PDF)

SRAM Austin Semiconductor, Inc. 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout FEATURES • High-speed access times of 10, 12, 15 and 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE\ and OE\ options • CE\ power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 3.3V power supply AS5LC1008 PIN ASSIGNMENT (Top View) 32-Pin, 400.

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SRAM Austin Semiconductor, Inc. 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout FEATURES • High-speed access times of 10, 12, 15 and 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE\ and OE\ options • CE\ power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 3.3V power supply AS5LC1008 PIN ASSIGNMENT (Top View) 32-Pin, 400-mil Plastic SOJ (DJ) & Ceramic SOJ (DCJ) OPTIONS • Timing 10ns access 12ns access 15ns access www.DataSheet4U.com 20ns access • Package Plastic SOJ (32-pin, 400-mil) *Ceramic SOJ (32-pin, 400-mil) • Operating Temperature Ranges -Military (-55oC to +125oC) -Industrial (-40oC to +85oC) MARKING -10 -12 -15 -20 A0 A1 A2 A3 CE\ I/O 0 I/O 1 Vcc GND I/O 2 I/O 3 WE\ A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE\ I/O 7 I/O 6 GND Vcc I/O 5 I/O 4 A12 A11 A10 A9 A8 DJ DCJ No. 906 No. 501 PIN FUNCTIONS XT IT *Consult Factory, Possible Future Offering GENERAL DESCRIPTION The ASI AS5LC1008 is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The AS5LC1008 is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250µW (typical) with CMOS input levels. The AS5LC1008 operates from a single 3.3V power supply and all inputs are TTL-compatible. PIN A0 - A16 CE\ OE\ WE\ I/O0 - I/O7 VCC GND DESCRIPTION Address Inputs Chip Enable Input Output Enable Input Write Enable Input Bidirectional Ports Power Ground For more products and information please visit our web site at www.austinsemiconductor.com AS5LC1008 Rev. 1.0 11/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM A0 - A16 128K x 8 MEMORY ARRAY AS5LC1008 DECODER VCC GND I/O0 - I/O7 I/O DATA CIRCUIT COLUMN I/O CE\ OE\ WE\ CONTROL CIRCUIT ABSOLUTE MAXIMUM RATINGS* Terminal Voltage with Respect to GND (VTERM)...........................................................................................-0.5V to VCC + 0.5V Temperature Under Bias (TBIAS).............................................................................................................................-55°C to +125°C Storage Temperature (TSTG)....................................................................................................................................-65°C to +150°C Power Dissipation (PT)................................................................................................................................................................1.0W *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE\ X H H L CE\ H L L L OE\ X H L X I/O Operation VCC Current High-Z High-Z DOUT DIN ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2 AS5LC1008 Rev. 1.0 11/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM Austin Semiconductor, Inc. AS5LC1008 ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < +125oC or -40oC to +85oC; Vcc = 3.3V +0.3V) PARAMETER Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage 1 SYMBOL VOH VOL VIH VIL ILI ILO CONDITIONS VCC = Min., IOH = -4.0mA VCC = Min., IOL = 8.0mA MIN 2.4 --2.2 -0.3 MAX --0.4 VCC + 0.3 0.8 5 5 UNITS V V V V µA µA GND < VIN < VCC GND < VOUT < VCC; Outputs Disabled -5 -5 NOTE: 1. VIL = -3.0V for pulse width less than 10ns. POWER SUPPLY CHARACTERISTICS1 (-55oC < TA < +125oC or -40oC to +85oC; Vcc = 3.3V +0.3V) PARAMETER VCC Dynamic Operating Supply Current SYM ICC CONDITIONS VCC = Max, CE\ = VIL, IOUT = 0 mA, f = Max VCC = Max, VIN = VIH or VIL CE\ > VIH, f = Max VCC = Max, VIN = VIH or VIL CE\ > VIH, f = 0 VIN > VCC - 0.2V, or VIN < 0.2V, f = 0 -10 -12 -20 -15 MIN MAX MIN MAX MIN MAX MIN MAX UNIT --160 --140 --130 --120 mA ISB TTL Standby Current (TTL Inputs) ISB1 --- 45 --- 40 --- 35 --- 30 mA --- 30 --- 30 --- 30 --- 30 mA CMOS Standby Current (CMOS Inputs) ISB2 --- 10 --- 10 --- 10 --- 10 mA NOTE: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 mean.


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