FDS8690

FDS8690 N-Channel PowerTrench® MOSFET January 2006 FDS8690 N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features „ Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A „ Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A „ High performance trench technology for extremely low rDS(on) and fast switching „ Very low gate charge „ High power and current handling capability „ 100% RG tested „ RoHS Compliant LE A REE I DF Applications „ Notebook CPU power supply „ Synchronous rectifier M ENTATIO LE N MP www.DataSheet4U.com Absolute Maximum Ratings TA = 25°C unless otherwise Noted Symbol VDS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Temperature (Note 1a) Ratings 30 ±20 14 100 210 2.5 1.2 1.0 -55 to +150 °C W Units V V A mJ Thermal Characteristics RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS8690 Device FDS8690 Reel Size 13” 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com ©20...