FDS6676AS 30V N-Channel PowerTrench SyncFET
November 2005
FDS6676AS
30V N-Channel PowerTrench® SyncFET™
General Descri...
FDS6676AS 30V N-Channel PowerTrench SyncFET
November 2005
FDS6676AS
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET and
Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDS6676AS RDS(ON) includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET technology.
Features
14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V Includes SyncFET
Schottky body diode Low gate charge (45nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability
Applications
DC/DC converter Low side notebook
D D
www.DataSheet4U.com
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
14.5 50 2.5 1.2 1 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W
Package Marking and Ordering Information
Device Marking FDS6676AS FDS6676AS Device FDS6676AS FDS6676AS_NL (Note 3...