IRF7325

PD- 94094 IRF7325 HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance q Dual P-Channel MOSFET q Low Profile (<1.8mm) q Available in Tape & Reel q q VDSS -12V RDS(on) max (mΩ) 24@VGS = -4.5V 33@VGS = -2.5V 49@VGS = -1.8V ID ±7.8A ±6.2A ±3.9A Description New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 www.DataSheet4U.com T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -7.8 -6.2 -39 2.0 1.3 16 ±...