IRF7107

PD - 9.1099B PRELIMINARY IRF7107 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. N-Ch D1 D1 D2 D2 P-Ch -20V S1 G1 S2 G2 2 7 VDSS 20V 3 6 4 5 RDS(on) 0.125Ω 0.160Ω ID 3.0A -2.8A P-CHANNEL MOSFET Top View www.DataSheet4U.com SO-8 Absolute Maximum Ratings Max. N-Channel ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-...