TECHNICAL DATA
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/623 Devices 2N7371 Qualified Lev...
TECHNICAL DATA
PNP DARLINGTON HIGH POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/623 Devices 2N7371 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC
Value
100 100 5.0 0.2 12 100 -65 to +175 Max. 1.5
Units
Vdc Vdc Vdc Adc Adc W
0
www.DataSheet4U.com
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case
0
Unit C/W
TO-254AA*
1) Derate linearly 0.667 W/0C above TC > +250C
*See Appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VCEO(sus) ICEO ICEX IEBO 100 1.0 0.5 2.0 Vdc mAdc mAdc mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N7371 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio IC = 6.0 Adc, VCE = 3.0 Vdc IC = 12 Adc, VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC = 12 Adc, IB = 120 mAdc Base-Emitter Saturation Voltage IC = 12 Adc...
