2N4033

TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 Devices 2N4029 2N4033 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current www.DataSheet4U.com Symbol VCEO VCBO VEBO IC VALUE 80 80 5.0 1.0 2N4029 2N4033 0.5 0.8 -55 to +200 Max. 25.0 1 2 Unit Vdc Vdc Vdc Adc W C TO-18* (TO-206AA) 2N4029 Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range PT TJ, Tstg Symbol RθJC 0 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 4.56 mW/0C for TA > +250C 0 Unit C/W TO-39* (TO-205AD) 2N4033 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Cutoff Current VCB = 80 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VBE = 5.0 Vdc VBE = 3.0 Vdc Collector-Emitter Cutoff Voltage VBE = 40 Vdc; VCE = 60 Vdc ICBO 10 10 25 10 25 µAdc ηAdc µAdc ηAdc ηAdc IEBO ICEX 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N4029, 2N4033 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 100 µAdc, VCE = 5.0 Vdc IC = 100 mAdc, VCE = 5.0 Vdc IC = 500 mAdc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc ...