TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/512 Devices 2N4029 2N4033 Qualified Level JA...
TECHNICAL DATA
PNP SILICON SWITCHING
TRANSISTOR
Qualified per MIL-PRF-19500/512 Devices 2N4029 2N4033 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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Symbol
VCEO VCBO VEBO IC
VALUE
80 80 5.0 1.0 2N4029 2N4033 0.5 0.8 -55 to +200 Max. 25.0
1 2
Unit
Vdc Vdc Vdc Adc W C
TO-18* (TO-206AA) 2N4029
Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range
PT TJ, Tstg Symbol RθJC
0
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 4.56 mW/0C for TA > +250C
0
Unit C/W
TO-39* (TO-205AD) 2N4033
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current VCB = 80 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VBE = 5.0 Vdc VBE = 3.0 Vdc Collector-Emitter Cutoff Voltage VBE = 40 Vdc; VCE = 60 Vdc ICBO 10 10 25 10 25 µAdc ηAdc µAdc ηAdc ηAdc
IEBO ICEX
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2N4029, 2N4033 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 100 µAdc, VCE = 5.0 Vdc IC = 100 mAdc, VCE = 5.0 Vdc IC = 500 mAdc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc ...