2N3251A

TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/323 Devices 2N3250A 2N3251A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol (1)(2) RθJA Value 60 60 5.0 200 0.36 1.2 -65 to +175 Max. 417 Units Vdc Vdc Vdc mAdc W W 0 C Unit C/W www.DataSheet4U.com THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Ambient 1) Derate linearly 2.4 W/0C for TA > +250C 2) Derate linearly 8.0 W/0C for TC > +250C 0 TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 40 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc V(BR)CEO ICEX ICBO IEBO ICEX 60 20 10 20 10 50 Vdc ηAdc µAdc ηAdc µAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3250A, 2N3251A JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1 mAdc, V...