140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N2857
RF & MICROWAVE DISCR...
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N2857
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
Features
Silicon
NPN, To-72 packaged UHF
Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC
2
Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz
1 4
3
1. Emitter 2. Base 3. Collector 4. Case
TO-72
DESCRIPTION:
www.DataSheet4U.com
The 2N2857 is a silicon
NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C)
Symbol Parameter Value Unit
VCEO VCBO VEBO PD IC
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Maximum Device Dissipation Collector Current
15 30 2.5 200 40
V V V mW mA
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 0.88 º C/mW
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N2857
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC
Symbol BVCEO BVCBO BVEBO ICBO HFE Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 15 V, IE = 0 V) DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 V) 15 30 2.5 30 Value Typ. Max. .01 150 Unit V V V µA
DYNAMIC
Symbol fT NF Test C...