Document
AP10N70R/P-A
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Rated Test ▼ Fast Switching Performance ▼ Simple Drive Requirement ▼ RoHS Compliant G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
650V 0.6Ω 10A
S
Description
AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 and TO-262 package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
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G
D
S
TO-262(R)
G D
S
TO-220(P)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 650 ± 30 10 6.8 40 174 1.39
2
Units V V A A A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
50 10 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.72 62 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200519062-1/4
AP10N70R/P-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
o
Test Conditions VGS=0V, ID=1.0mA VGS=10V, ID=5.0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=10A VDS=480V VGS=10V VDD=300V ID=10A RG=10Ω,VGS=10V RD=30Ω VGS=0V VDS=15V f=1.0MHz f=1.0MHz
Min. 650 2 5 -
Typ. 35.9 8.3 11.5 14.9 19.7 51.7 23.3 630 20 2
Max. Units 0.6 4 10 100 ±100 57 3 V Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
3
1950 3120
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
3 2
Test Conditions Tj=25℃, IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 640 7460
Max. Units 1.5 V ns nC
trr
Qrr Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited by safe operating area.
o 2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP10N70P/R-A
20
16
T C =25 C
16
o
ID , Drain Current (A)
10V 6.0V 5.0V
T C =150 C
12
o
10V 6.0V 5.0V 4.5V
ID , Drain Current (A)
12
8
8
V G = 4.0V
4
4.5V
4
V G =4.0V
0 0 5 10 15 20
0
0
10
20
30
40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I D =5A V G =10V Normalized BVDSS (V)
1.1
Normalized RDS(ON)
2
1
1
0.9
0.8 25 50 75 100 125 150
0 25 50 75 100 125 150
T j , Junction Temperature ( C)
o
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction Temperature
10 1.5
Fig 4. Normalized On-Resistance v.s. Junction Temperature
T j = 150 o C
T j = 25 o C VGS(th) (V)
1
IS (A)
1
0.5
0.1 0 0.2 0.4 0.6 0.8 1 1.2
0 25 50 75 100 125 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP10N70P/R-A
f=1.0MHz
16 10000
VGS , Gate to Source Voltage (V)
I D =10A
12
C iss
V DS =320V V DS =400V V DS =480V C (pF) C oss
100
8
4
C rss
0 1
0
20
40
60
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
100us
0.2
ID (A)
0.1
1ms
1
0.1
0.05
PDM
0.02
T c =25 C Single Pulse
o
10ms 100ms 1S DC
t T
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.1 1 10 100 1000
0.01 0.00001 0.0001 0.001 0.01 0.1 1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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