US5U29
Transistor
2.5V Drive Pch+SBD MOS FET
US5U29
zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions (Unit : mm)
TUMT5
2.0 1.3 0.65 0.65
0.85Max. 0.77
zFeatures 1) The US5U29 combines Pch MOS FET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Buil...
