US5U30

US5U30 　　2.5V Drive Pch+SBD MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD -20V 390mΩ ±1A 1.0W lFeatures 1) The US5U30 combines Pch MOSFET with a 　　Schottky barrier diode in a single 2) High-speed switching, Low On-resistance 3) Low voltage drive (2.5V drive) 4) Built-in Low VF schottky barrier diode 5) Pb-free lead plating ; RoHS compliant lOutline SOT-353T SC-113CA TUMT5 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR Marking U30 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Gate - Source voltage VGSS ±12 V Continuous drain current ID ±1 A Pulsed drain current IDP*1 ±4 A Continuous source current (body diode) IS -0.4 A Pulsed source current (body diode) ISP*1 -4 A Power dissipation PD*3 0.7 W/element Junction temperature Tj 150 ℃ 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171117 - Rev.002 　 　 US5U30 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VRM VR IF IFSM*2 PD*3 Tj Value 30 20 0.5 2 0.5 150 Unit V V A A W...