Document
IRLML2402PbF
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
G1
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
S2
l RoHS Compliant, Halogen-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
VDSS = 20V
3D
RDS(on) = 0.25Ω
A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro3™
Base Part Number IRLML2402TRPbF
Package Type Micro3™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number IRLML2402TRPbF
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
VGS dv/dt TJ, TSTG
Parameter Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max. 1.2 0.95 7.4 540 4.3 ± 12 5.0 -55 to + 150
Units
A
mW mW/°C
V V/ns °C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
1
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Typ.
Max. 230
Units °C/W
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April 24, 2014
IRLML2402PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20 V VGS = 0V, ID = 250µA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient 0.024 V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
0.25 0.35
Ω
VGS = 4.5V, ID = 0.93A VGS = 2.7V, ID = 0.47A
VGS(th)
Gate Threshold Voltage
0.70 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
1.3 S VDS = 10V, ID = 0.47A
IDSS
Drain-to-Source Leakage Current
1.0 25
µA
VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
-100 nA VGS = -12V
100
VGS = 12V
Qg
Total Gate Charge
2.6 3.9
ID = 0.93A
Qgs
Gate-to-Source Charge
0.41 0.62 nC VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
1.1 1.7
VGS = 4.5V, See Fig. 6 and 9
td(on)
Turn-On Delay Time
2.5
VDD = 10V
tr td(off)
Rise Time Turn-Off Delay Time
9.5 9.7
ns
ID = 0.93A RG = 6.2Ω
tf
Fall Time
4.8
RD = 11Ω, See Fig. 10
Ciss
Input Capacitance
110
VGS = 0V
Coss
Output Capacitance
51 pF VDS = 15V
Crss
Reverse Transfer Capacitance
25
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
0.54 7.4
MOSFET symbol A showing the
integral reverse p-n junction diode.
D
G S
1.2 V TJ = 25°C, IS = 0.93A, VGS = 0V
25 38 ns TJ = 25°C, IF = 0.93A
16 24 nC di/dt = 100A/µs
Notes: Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 0.93A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec.
2
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April 24, 2014
IRLML2402PbF
ID , Drain-to-Source Current (A)
100 10
TOP BOTTOM
VGS
7.5V 5.0V
4.0V 3.5V
3.0V 2.5V
2.0V 1.5V
1
0.1
0.01 0.1
1.5V
20μs PULSE WIDTH
TJ = 25°C
A
1
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain-to-Source Current (A)
100 10
TOP BOTTOM
VGS
7.5V 5.0V
4.0V 3.5V 3.0V
2.5V 2.0V
1.5V
1
1.5V
0.1
0.01 0.1
20μs PULSE WIDTH
TJ = 150°C
A
1
10
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
10
TJ = 25°C TJ = 150°C
1
2.0 ID = 0.93A
1.5
1.0
0.1
0.01 1.5
VDS = 10V
20μs PULSE WIDTH
A
2.0
2.5
3.0
3.5
4.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
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