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IRLML2402PBF Dataheets PDF



Part Number IRLML2402PBF
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET
Datasheet IRLML2402PBF DatasheetIRLML2402PBF Datasheet (PDF)

IRLML2402PbF l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint G1 l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free S2 l RoHS Compliant, Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFE.

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IRLML2402PbF l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint G1 l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free S2 l RoHS Compliant, Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET VDSS = 20V 3D RDS(on) = 0.25Ω A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro3™ Base Part Number IRLML2402TRPbF Package Type Micro3™ (SOT-23) Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML2402TRPbF Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. 1.2 0.95 7.4 540 4.3 ± 12 5.0 -55 to + 150 Units A mW mW/°C V V/ns °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient „ 1 www.irf.com © 2014 International Rectifier Typ. ––– Max. 230 Units °C/W Submit Datasheet Feedback April 24, 2014 IRLML2402PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.25 ––– ––– 0.35 Ω VGS = 4.5V, ID = 0.93A ƒ VGS = 2.7V, ID = 0.47A ƒ VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 1.3 ––– ––– S VDS = 10V, ID = 0.47A IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 25 µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -12V ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 2.6 3.9 ID = 0.93A Qgs Gate-to-Source Charge ––– 0.41 0.62 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– 1.1 1.7 VGS = 4.5V, See Fig. 6 and 9 ƒ td(on) Turn-On Delay Time ––– 2.5 ––– VDD = 10V tr td(off) Rise Time Turn-Off Delay Time ––– 9.5 ––– ––– 9.7 ––– ns ID = 0.93A RG = 6.2Ω tf Fall Time ––– 4.8 ––– RD = 11Ω, See Fig. 10 ƒ Ciss Input Capacitance ––– 110 ––– VGS = 0V Coss Output Capacitance ––– 51 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 25 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse RecoveryCharge Min. Typ. Max. Units Conditions ––– ––– 0.54 ––– ––– 7.4 MOSFET symbol A showing the integral reverse p-n junction diode. D G S ––– ––– 1.2 V TJ = 25°C, IS = 0.93A, VGS = 0V ƒ ––– 25 38 ns TJ = 25°C, IF = 0.93A ––– 16 24 nC di/dt = 100A/µs ƒ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ ISD ≤ 0.93A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Surface mounted on FR-4 board, t ≤ 5sec. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2402PbF ID , Drain-to-Source Current (A) 100 10 TOP BOTTOM VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1 0.1 0.01 0.1 1.5V 20μs PULSE WIDTH TJ = 25°C A 1 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain-to-Source Current (A) 100 10 TOP BOTTOM VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1 1.5V 0.1 0.01 0.1 20μs PULSE WIDTH TJ = 150°C A 1 10 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 10 TJ = 25°C TJ = 150°C 1 2.0 ID = 0.93A 1.5 1.0 0.1 0.01 1.5 VDS = 10V 20μs PULSE WIDTH A 2.0 2.5 3.0 3.5 4.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 www.irf.c.


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