IRL640SPBF

PD- 95585 IRL640SPbF • Lead-Free www.irf.com 1 07/20/04 IRL640SPbF 2 www.irf.com IRL640SPbF www.irf.com 3 IRL640SPbF 4 www.irf.com IRL640SPbF www.irf.com 5 IRL640SPbF 6 www.irf.com IRL640SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + + - dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS www.irf.com 7 IRL640SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T H E AS S E MB L Y L INE "L " Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E R NAT IONAL R ECT IF IER L OGO PAR T NU MB E R F 530S DAT E CODE YE AR 0 = 2000 WE EK 02 L INE L AS S E MB L Y L OT CODE OR INT E RNAT IONAL RE CT IF IE R L OGO PART NUMB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E P RODUCT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S E MB LY S IT E...