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IRL630

International Rectifier

POWER MOSFET


Description
Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET ® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling Description Third Generation HEXFETs from International Rectifier provide the designer with the best comb...



International Rectifier

IRL630

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