PD - 94545C
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
C
IRGB8B60K IRGS8B60K IRGSL8B60K
VCES = 600V IC = 20A, TC=100°C
G E
tsc>10µs, TJ=150°C
Benefits
Benchmark Efficiency for Motor Control. Rugged Transient ...
