PD - 95645A
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.
IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF
C
VCES = 600V IC = 20A, TC=100°C
G E
tsc>10µs, TJ=150°C
Benefits
Benchmark Efficiency for Motor Cont...
