IRGS4B60KD1

PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. D2Pak TO-220 IRGB4B60KD1PbF IRGS4B60KD1 TO-262 IRGSL4B60KD1 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 11 7.6 Units V A c 22 22 11 6.7 22 ±20 63 31 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) V W Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Storage Temperature Range, for 10 sec. Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greas...