Document
PD - 94807
IRFZ34NPbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB
D
VDSS = 55V RDS(on) = 0.040Ω
G S
ID = 29A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
29 20 100 68 0.45 ± 20 65 16 6.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
–––– –––– ––––
Typ.
–––– 0.50 ––––
Max.
2.2 –––– 62
Units
°C/W
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IRFZ34NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 55 ––– ––– 2.0 6.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.052 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.0 49 31 40
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.040 Ω VGS = 10V, ID = 16A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 16A 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 34 ID = 16A 6.8 nC VDS = 44V 14 VGS = 10V, See Fig. 6 and 13 ––– VDD = 28V ––– ID = 16A ns ––– RG = 18Ω ––– RD = 1.8Ω, See Fig. 10 D Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact S 700 ––– VGS = 0V 240 ––– pF VDS = 25V 100 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 29 showing the A G integral reverse ––– ––– 100 p-n junction diode. S ––– ––– 1.6 V TJ = 25°C, IS = 16A, VGS = 0V ––– 57 86 ns TJ = 25°C, IF = 16A ––– 130 200 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 410µH RG = 25Ω, IAS = 16A. (See Figure 12) ISD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
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IRFZ34NPbF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I , Drain-to-Source Current (A) D
100
I , Drain-to-Source Current (A) D
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
10
4.5V
4.5V
1
1
0.1 0.1
20µs PULSE WIDTH TC = 25°C
1 10
A
100
0.1 0.1
20µs PULSE WIDTH TC = 175°C
1 10 100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.4
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 26A
I D , Drain-to-Source Current (A)
TJ = 25°C TJ = 175°C
2.0
1.6
10
1.2
0.8
0.4
1 4 5 6 7
V DS = 25V 20µs PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFZ34NPbF
1200
1000
800
Coss
600
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f.