HEXFET Power MOSFET
SMPS MOSFET
PD -95076B
Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power ...
Description
SMPS MOSFET
PD -95076B
Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l Lead-Free
l
IRFR430APbF IRFU430APbF
RDS(on) max
1.7Ω
HEXFET® Power MOSFET
VDSS
500V
ID
5.0A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001)
l
D-Pak IRFR430A
I-Pak IRFU430A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
5.0 3.2 20 110 0.91 ± 30 3.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
130 5.0 11
Units
mJ A mJ
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
1.1 ––– 62
Units
°C/W
www.irf.com
1
03/02/07
IRFR/U430APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) St...
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