HEXFET Power MOSFET
PD - 96046
IRFR3709ZCPbF IRFU3709ZCPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor...
Description
PD - 96046
IRFR3709ZCPbF IRFU3709ZCPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits
l l l
HEXFET® Power MOSFET
VDSS RDS(on) max
30V 6.5m:
Qg
17nC
Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current
I-Pak D-Pak IRFR3709ZCPbF IRFU3709ZCPbF
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 86 61
Units
V A
f f
340 79 39 0.53 -55 to + 175 W/°C °C W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
1.9 50 110
Units
°C/W
gÃ
––– ––– –––
Notes through
are on page 11
www.irf.com
1
04/20/06
IRFR/U3709ZCPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-So...
Similar Datasheet