IRFR3418PBF

PD - 95516A HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l IRFR3418PbF IRFU3418PbF 14m: VDSS 80V RDS(on) Max ID 30A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR3418 I-Pak IRFU3418 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 80 ± 20 70 50 280 140 3.8 0.95 5.2 -55 to + 175 Units V h A W c Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and e W/°C V/ns °C Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) * Junction-to-Ambient Typ. ––– ––– ––– Max. 1.05 40 110 Units °C/W Notes  through † are on page 10 www.irf.com 1 12/03/04 IRFR/U3418PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Le...