IRFPS38N60LPBF

SMPS MOSFET PD - 95701 IRFPS38N60LPbF Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications Lead-Free HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. ID 600V 120mΩ 170ns 38A Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. Higher Gate voltage threshold offers improved noise immunity . SUPER TO-247AC Absolute Maximum Ratings ID @ TC = 25°C IDM Parameter Continuous Drain Current, VGS @ 10V Max. 38 24 150 540 4.3 ±30 13 -55 to + 150 300 (1.6mm from case ) 1.1(10) Nm (lbfin) W W/°C V V/ns °C Units A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG ™ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 170 420 830 9.1 38 A 150 1.5 250 630 1240 14 nC A V ns Conditions MOSFET symbo...