IRFPS37N50A

PD- 91822C SMPS MOSFET IRFPS37N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) l VDSS 500V RDS(on) max 0.13Ω ID 36A SUPER-247 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 36 23 144 446 3.6 ± 30 3.5 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l l Full Bridge Converters Power Factor Correction Boost Notes  through … are on page 8 www.irf.com 1 12/14/99 IRFPS37N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– 2.0 ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA 0.13 Ω VGS = 10V, I D = 22A „ ...