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IRFIZ34EPBF Dataheets PDF



Part Number IRFIZ34EPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFIZ34EPBF DatasheetIRFIZ34EPBF Datasheet (PDF)

PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.042Ω G S ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t.

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