IRFIB8N50KPBF

SMPS MOSFET PD - 95751 IRFIB8N50KPbF Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current HEXFET® Power MOSFET VDSS 500V RDS(on) typ. 290mΩ ID 6.7A TO-220 FULL-PAK Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 6.7 4.2 27 45 0.36 ±30 17 -55 to + 150 Units A W W/°C V V/ns °C c PD @TC = 25°C VGS dv/dt TJ TSTG Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw e 300 (1.6mm from case ) 1.1(10) Nm (lbfin) Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current c d Typ. ––– ––– ––– Max. 290 6.7 4.5 Units mJ A mJ Repetitive Avalanche Energy c Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ. ––– ––– Max. 2.76 65 Units °C/W www.irf.com 1 8/23/04 IRFIB8N50KPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source O...