HEXFET Power MOSFET
PD - 95936B
IRFB4610PbF IRFS4610PbF IRFSL4610PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uni...
Description
PD - 95936B
IRFB4610PbF IRFS4610PbF IRFSL4610PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability
HEXFET® Power MOSFET
D
G S
VDSS RDS(on) typ. max. ID
100V 11m: 14m: 73A
S D G
TO-220AB IRFB4610PbF
S GD
D2Pak IRFS4610PbF
S D G
TO-262 IRFSL4610PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dV/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
73 52 290 190 1.3 ± 20 7.6 -55 to + 175 300 10lb in (1.1N m)
Units
A
f
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
W W/°C V V/ns °C
e
x
x
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current
Ã
d
370 See Fig. 14, 15, 16a, 16b,
mJ A mJ
Repetitive Avalanche Energy
f
Thermal Resistance
Symbol
RθJC RθCS RθJA RθJA Junction-to-Case
j
Parameter
Typ.
––– 0.50 ––– –––
Max.
0.77 ––– 62 40
Units
°C/W
Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-...
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