IRFSL4610PBF

PD - 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID 100V 11m: 14m: 73A S D G TO-220AB IRFB4610PbF S GD D2Pak IRFS4610PbF S D G TO-262 IRFSL4610PbF Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dV/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 73 52 290 190 1.3 ± 20 7.6 -55 to + 175 300 10lb in (1.1N m) Units A f Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw W W/°C V V/ns °C e x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Ù d 370 See Fig. 14, 15, 16a, 16b, mJ A mJ Repetitive Avalanche Energy f Thermal Resistance Symbol RθJC RθCS RθJA RθJA Junction-to-Case j Parameter Typ. ––– 0.50 ––– ––– Max. 0.77 ––– 62 40 Units °C/W Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-...