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IRFSL4410PbF Dataheets PDF



Part Number IRFSL4410PbF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFSL4410PbF DatasheetIRFSL4410PbF Datasheet (PDF)

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G S HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free VDSS RDS(on) typ. max. ID 100V 8.0m: 10m: 88A S D G TO-220AB IRFB4410Pb.

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PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G S HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free VDSS RDS(on) typ. max. ID 100V 8.0m: 10m: 88A S D G TO-220AB IRFB4410PbF S D G D2Pak IRFS4410PbF S D G TO-262 IRFSL4410PbF Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d ™l 63™l 88 380 200 1.3 Max. Units A Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw l l W W/°C V V/ns °C f ± 20 19 -55 to + 175 300 10lb in (1.1N m) 220 See Fig. 14, 15, 16a, 16b x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Ù e mJ A mJ Repetitive Avalanche Energy g Thermal Resistance Symbol RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-Ambient (PCB Mount) , D2Pak k Parameter Typ. ––– 0.50 ––– ––– Max. 0.61 ––– 62 40 l Units °C/W k jk www.irf.com 1 05/02/07 IRFB/S/SL4410PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance Min. Typ. Max. Units 100 ––– ––– 2.0 ––– ––– ––– ––– ––– ––– ––– 0.094 ––– 8.0 10 ––– 4.0 ––– 20 ––– 250 ––– 200 ––– -200 1.5 ––– Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 58A V VDS = VGS, ID = 150µA µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Ω f = 1MHz, open drain g d Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) Min. Typ. Max. Units 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 120 31 44 24 80 55 50 5150 360 190 420 500 ––– 180 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S nC Conditions VDS = 50V, ID = 58A ID = 58A VDS = 8.


IRFS4410PbF IRFSL4410PbF IRFB4410


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