Document
PD - 95707E
IRFB4410PbF IRFS4410PbF IRFSL4410PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G S
HEXFET® Power MOSFET
D
Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
VDSS RDS(on) typ. max. ID
100V 8.0m: 10m: 88A
S D G
TO-220AB IRFB4410PbF
S D G
D2Pak IRFS4410PbF
S D G
TO-262 IRFSL4410PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
d
l 63l
88 380 200 1.3
Max.
Units
A
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
l l
W W/°C V V/ns °C
f
± 20 19 -55 to + 175 300 10lb in (1.1N m) 220 See Fig. 14, 15, 16a, 16b
x
x
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current
Ã
e
mJ A mJ
Repetitive Avalanche Energy
g
Thermal Resistance
Symbol
RθJC RθCS RθJA RθJA Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-Ambient (PCB Mount) , D2Pak
k
Parameter
Typ.
––– 0.50 ––– –––
Max.
0.61 ––– 62 40
l
Units
°C/W
k
jk
www.irf.com
1
05/02/07
IRFB/S/SL4410PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance
Min. Typ. Max. Units
100 ––– ––– 2.0 ––– ––– ––– ––– ––– ––– ––– 0.094 ––– 8.0 10 ––– 4.0 ––– 20 ––– 250 ––– 200 ––– -200 1.5 –––
Conditions
V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 58A V VDS = VGS, ID = 150µA µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Ω f = 1MHz, open drain
g
d
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 120 31 44 24 80 55 50 5150 360 190 420 500 ––– 180 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S nC
Conditions
VDS = 50V, ID = 58A ID = 58A VDS = 8.