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LP3000P100

Filtronic Compound Semiconductors
Part Number LP3000P100
Manufacturer Filtronic Compound Semiconductors
Description PACKAGED 2W POWER PHEMT
Published Mar 22, 2005
Detailed Description PACKAGED 2W POWER PHEMT • FEATURES ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60%...
Datasheet PDF File LP3000P100 PDF File

LP3000P100
LP3000P100

Overview
PACKAGED 2W POWER PHEMT • FEATURES ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP3000P100 • DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.
25 µ m x 3000 µ m Schottky barrier gate, defined by electron-beam photolithography.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The LP3000 also features Si3N4 passivation and is available in die f...


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