IRF5210LPBF

l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Some Parameters are Different from IRF5210S/L l P-Channel l Lead-Free Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 60mΩ G S ID = -38A D D S D G D2Pak IRF5210SPbF S D G TO-262 IRF5210LPbF G Gate D Drain S Source Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V c Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation VGS EAS IAR EAR dv/dt Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy c Avalanche Current c Repetitive Avalanche Energy e Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case RθJA g Junction-to-Ambient (PCB Mount, steady state) Max. -38 -24 -140 3.1 170 1.3 ± 20 120 -23 17 -7.4 -55 to + 150 300 (1.6mm from case ) Typ. ––– ––– Max. 0.75 40 Units A W W/°C V mJ A mJ V/ns °C Units °C/W www.irf.com ...