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FCA16N60 Dataheets PDF



Part Number FCA16N60
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 600V N-Channel MOSFET
Datasheet FCA16N60 DatasheetFCA16N60 Datasheet (PDF)

FCA16N60 600V N-Channel MOSFET SuperFET FCA16N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested September 2006 TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced tech.

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FCA16N60 600V N-Channel MOSFET SuperFET FCA16N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested September 2006 TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G G DS www.DataSheet4U.com TO-3P FCA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCA16N60 600 16 10.1 48 ± 30 450 16 16.7 4.5 167 1.33 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FCA16N60 0.75 41.7 Unit °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCA16N60 REV. A1 FCA16N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCA16N60 FCA16N60 Device FCA16N60 FCA16N60_F109 Package TO-3P TO-3PN TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA, TJ = 25°C VGS = 0V, ID = 250μA, TJ = 150°C ID = 250μA, Referenced to 25°C VGS = 0V, ID = 16A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(Note 4, 5) Typ -650 0.6 700 -----0.22 11.5 1730 960 85 45 110 42 130 165 90 55 10.5 28 Max Units ----1 10 100 -100 5.0 0.26 -2250 1150 -60 -85 270 340 190 70 13 -V V V/°C V μA μA nA nA V Ω S pF pF pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 16A RG = 25Ω Switching Characteristics ----- VDS = 480V, ID = 16A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16A VGS = 0V, IS = 16A dIF/dt =100A/μs (Note 4) ------ ---435 7.0 16 48 1.4 --- A A V ns μC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCA16N60 REV. A1 2 www.fairchildsemi.com FCA16N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics 10 2 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID , Drain Current [A] ID, Drain Current [A] 10 1 10 1 150° ) C 25° ) C 10 0 -55° ) C * Note: 1. VDS = 40V 2. 250μs Pulse Test 10 0 * Notes : 1. 250μs Pulse Test 2. TC = 25 C o 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 10 2 0.6 0.5 RDS(ON) [Ω.


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