XP1005

35.0-43.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1005 Chip Device Layout Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to www.DataSheet4U.com allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 1050 mA +0.3 VDC +8.0 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Tempe...