GaAs MMIC Packaged Low Noise Amplifier
3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier
February 2007 - Rev 08-Feb-07
L1007-QT Features
12 dB Gain 2 dB Nois...
Description
3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier
February 2007 - Rev 08-Feb-07
L1007-QT Features
12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection
Circuit Description
Mimix Broadband’s 3.5 to 8.0 GHz low noise amplifier is packaged in surface mount 3x3 QFN package. The device is a self-biased, single supply design with 12 dB gain and 2 dB noise figure. This MMIC uses Mimix Broadband’s 0.25um optical pHEMT process.
Absolute Maximum Ratings
Supply Voltage RF Input Power Storage Temperature (Tstg) Junction Temperature Operating Temperature
+6 V +10 dBm -55 ºC to +125 ºC 175 ºC -40 ºC to +85ºC
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Operation beyond these conditions may cause permanent damage to the device.
Electrical Characteristics (T=25ºC)
Parameter
Frequency Range Gain Input Return Loss Noise Figure Output P1dB Output IP3 Supply Voltage Units GHz dB dB dBm dBm V Min. 3.5 Typ. 12 -10 2.0 13 22 3 Max. 8 -
Typical Parameters
Parameter
Frequency Gain IP Return Loss Op Return Loss NF 3.5 13 -15 -7.5 2.2 4 13 -15 -11 1.5
Typical
5 12.5 -11 -14 1.8 6 11 -12.5 -15 1.5 7 10 -12.5 -15 1.8 8 7.5 -10 -10 2.4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchas...
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