XB1005

35.0-45.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1005 Chip Device Layout Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive www.DataSheet4U.com epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-toPoint Radio, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 180 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF Table 5 MTTF Table 5 (5) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = ...