CMM0016

2.0-20.0 GHz GaAs MMIC 1W Power Amplifier October 2006 - Rev 13-Oct-06 CMM0016 Features Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1dB: 29 dBm, Typ. @ 18 GHz Linear Gain: 9.5 dB, Typ. @ 18 GHz pHEMT Technology Silicon Nitride Passivation Chip Diagram Units: mm Specifications (TA= 25°C,Vdd = 12V)1 Parameters Units Min Typ Max www.DataSheet4U.com Frequency Range Linear Gain Gain Flatness Power Output: 2-18 GHz (@1 dB Gain Compression) Power Output: 2-20 GHz (@1 dB Gain Compression) P1dB Variation (over operating frequency) Saturated Output Power: 2-18 GHz Saturated Output Power: 2-20 GHz Input Return Loss Output Return Loss Current Thermal Resistance GHz dB ±dB dBm dBm dBm dBm dBm dB dB mA °C/W 2.0 8.5 28.5 26.5 20.0 12.5 1.5 5.0 29.5 27.5 -10.0 -10.0 730 15.7 650 690 Stability 2 Unconditionally Stable Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 4). 2. Stability factor measured on-wafer. Absolute Maximum Ratings1 Parameter Rating Die Attach and Bonding Procedures Die Attach: Eutectic die attach is recommended. For eutectic die attach: Preform: AuSn (80% Au, 20% Sn); Stage Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1 min or less. Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (prestressed); Thermocompression bonding is preferred over thermosonic bonding. For thermocompression bonding:...